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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:166 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.5 ns
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Overview
The 71V67602S166BGG is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics. It provides a total storage capacity of 9 Mbit, organized as 256K words by 36 bits. The device supports a maximum clock frequency of 166 MHz with an access time of 3.5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 119-pin plastic ball grid array package.
Feature Summary
- Supports high-speed parallel interface operation at frequencies up to 166 MHz
- Provides 36-bit wide data organization for specialized processing applications
- Utilizes synchronous single data rate architecture for precise timing control
Applications
- High-performance networking equipment requiring fast buffer memory
- Telecommunications systems utilizing wide data buses
- Industrial automation controllers needing rapid data access
Procurement Notes
Verify component authenticity through authorized channels due to potential availability constraints. Confirm that the specific suffix matches required packaging and temperature specifications. Check for end-of-life notifications or product change notices affecting long-term supply stability before finalizing procurement plans.
Selection Notes
Select this component when a 36-bit data width is mandatory for system compatibility. Ensure the design accommodates the 119-pin BGA footprint and thermal requirements. Verify that the 3.3V logic levels align with the rest of the system bus architecture without additional level shifting.
Part Context
This part belongs to the 71V67602 series of synchronous SRAMs from Renesas. It shares architectural similarities with other variants in the family but offers higher speed performance compared to lower-frequency models like the 133 MHz or 150 MHz versions. The series targets applications demanding high bandwidth and low latency.
Replacement Considerations
Direct substitutes include the IDT71V67602S166BQG8 and the 71V67602S150BGG, though pinout and electrical characteristics must be validated against specific design constraints.
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