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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V67603S133BG is a 9 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM). It features a memory organization of 256 k x 36 bits and supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. The device operates within a supply voltage range of 3.135 V to 3.465 V, drawing a maximum power current of 260 mA. It is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. The component is designed for surface mount installation and functions reliably across a commercial temperature range from 0°C to +70°C.
Feature Summary
- Supports high-speed parallel data transfer via synchronous interface architecture
- Provides wide data bus width capability through 36-bit organization structure
- Operates on a single 3.3V power supply rail for simplified system design
Applications
- High-performance networking equipment requiring fast buffer memory
- Industrial automation systems utilizing real-time data processing
- Telecommunications infrastructure involving signal buffering
Procurement Notes
Verify the specific suffix designation against official documentation to confirm package type and environmental rating. Confirm moisture sensitivity level handling requirements prior to assembly. Check for end-of-life status or alternative recommendations from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a 36-bit wide data path is required for high-throughput applications. Ensure the system design accommodates the 119-pin PBGA footprint and thermal characteristics. Verify that the operating environment remains within the specified commercial temperature limits.
Part Context
This part belongs to the 71V67603S133 series of synchronous SRAM devices. It serves as a specialized memory solution for applications demanding low latency and high bandwidth. The series is engineered to support complex digital signal processing tasks in embedded systems.
Replacement Considerations
Consult official datasheets for pin-compatible alternatives. Verify electrical specifications match exactly before substitution.
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