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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V67603S133BG8 is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 9 Mbit, organized as 256 k words by 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and features a parallel interface. The component is housed in a 119-pin PBGA package measuring 14x22 mm, designed for surface mount technology applications.
Feature Summary
- Supports high-speed parallel data transfer via a synchronous SDR interface architecture
- Provides wide 36-bit data word organization for efficient system integration
- Operates reliably across extended industrial temperature ranges
Applications
- High-performance computing systems requiring fast buffer memory
- Industrial automation controllers needing reliable volatile storage
- Telecommunications equipment utilizing synchronous memory interfaces
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm package type and moisture sensitivity level. Confirm RoHS compliance status as it varies by manufacturing batch and region. Check for obsolescence notices or product change notifications prior to final design approval. Ensure supply chain availability aligns with project timelines due to potential lifecycle constraints.
Selection Notes
Select this component when a 36-bit wide data path is required for synchronous memory applications. Compare power consumption specifications against alternative packages if thermal management is critical. Verify that the 119-pin BGA footprint fits the target PCB layout constraints. Ensure the operating voltage requirements match the system's 3.3V rail tolerance levels.
Part Context
This part belongs to the 71V67603S133 series of synchronous SRAMs from Renesas. It shares core electrical characteristics with other variants in the family but differs in physical packaging and termination style. The BG8 suffix typically denotes a specific ball grid array configuration distinct from tray-packaged equivalents like the BG variant.
Replacement Considerations
Official substitutes include the IDT71V67603S133BGI8 and 71V67603S133PFGI. Verify pin compatibility and package dimensions before substitution.
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