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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V67603S133BGG8 is a 9 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM). It features a memory organization of 256 k x 36 bits and supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. The device operates within a supply voltage range of 3.135 V to 3.465 V and has a maximum power current of 210 mA. It is housed in a 165-pin CABGA package, suitable for surface mount installation, and functions reliably across an operating temperature range of -40°C to +85°C.
Feature Summary
- Supports high-speed parallel data transfer via synchronous interface architecture
- Provides wide industrial temperature operational capability for robust performance
- Delivers low power consumption characteristics relative to standard SRAM densities
Applications
- High-performance embedded systems requiring fast random access memory
- Industrial equipment control units demanding reliable data storage
- Network infrastructure hardware utilizing parallel bus interfaces
Procurement Notes
Verify component authenticity through authorized distributors or official Renesas channels. Confirm the specific suffix BGG8 matches the required 165-pin CABGA package and lead-free specifications. Check for moisture sensitivity handling requirements prior to assembly. Ensure compatibility with existing board designs regarding pinout and voltage levels before finalizing procurement orders.
Selection Notes
Select this component when a 36-bit wide data path is necessary for system architecture. Consider the 133 MHz speed grade if higher throughput than slower variants is required. Evaluate the CABGA package size against available PCB real estate constraints. Compare power dissipation limits against thermal management capabilities of the target enclosure design.
Part Context
This part belongs to the 71V67603 series of synchronous SRAMs from Renesas. It shares core memory density and organization with other variants like the 71V67603S133PFGI but differs in package type and potentially thermal characteristics. The series is designed for applications needing non-volatile-like speed with volatile memory flexibility.
Replacement Considerations
Direct substitutes include IDT71V67603S133BGG8. Verify pin compatibility and electrical parameters before swapping.
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