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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The Renesas 71V67603S133BGGI is a synchronous single data rate static random access memory with a total storage capacity of 9 Mbit. The internal organization is structured as 256K words by 36 bits, providing wide data interfaces suitable for high-performance applications. It supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. The device operates within a supply voltage range of 3.135 V to 3.465 V and features a 119-pin PBGA package measuring 14x22 mm. It is rated for industrial temperature ranges from -40°C to +85°C.
Feature Summary
- Supports synchronous parallel interface with single data rate operation for efficient data transfer.
- Provides wide 36-bit data bus width to accommodate high-bandwidth system requirements.
- Operates at high clock frequencies up to 133 MHz with fast access times.
- Designed for surface mount installation in compact electronic assemblies.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in network routers and switches
- Frame buffer storage in display processing systems
- Data logging in industrial control units
Procurement Notes
Verify the specific suffix BGGI to confirm the 119-pin PBGA package and industrial temperature rating. Confirm RoHS compliance status as documentation indicates varying states across similar variants. Check for end-of-life notices or production change notifications that may affect long-term availability. Ensure moisture sensitivity level handling procedures are followed during assembly.
Selection Notes
Select this component when a wide 36-bit data path is required for synchronous memory applications. Compare against other series members like the 71V67603S133PFGI if TQFP packaging is preferred over BGA. Consider power consumption limits relative to the 280 mA maximum current draw. Evaluate board space constraints regarding the 14x22 mm footprint.
Part Context
This part belongs to the 71V67603S133 family of synchronous SRAMs manufactured by Renesas Electronics. It shares core specifications with other variants differing primarily in package type and thermal grade. The family is designed for applications requiring fast, reliable volatile memory with wide data buses.
Replacement Considerations
Publicly confirmed substitute part numbers include IS61LPS25636A-200B3LI from Integrated Silicon Solution Inc. Verify pin compatibility and electrical parameters before substitution.
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