— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
Download product information
Overview
The 71V67603S133BGI8 is a synchronous single data rate static random access memory manufactured by Renesas Electronics. It provides a storage capacity of 9 Mbit organized as 256 k x 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a voltage range of 3.135 V to 3.465 V and features a parallel interface. The component is housed in a 119-PBGA package measuring 14x22 mm and is rated for industrial temperatures from -40°C to +85°C.
Feature Summary
- Supports high-speed synchronous data transfer at frequencies up to 133 MHz
- Provides wide 36-bit data organization for efficient bus interfacing
- Utilizes surface-mount PBGA packaging for compact board integration
Applications
- High-performance networking equipment requiring fast buffer memory
- Industrial control systems needing reliable real-time data storage
- Telecommunications infrastructure utilizing synchronous SRAM interfaces
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Check moisture sensitivity level handling procedures before assembly. Validate pin compatibility with existing PCB layouts given the specific BGA footprint dimensions.
Selection Notes
Select this component when a 36-bit wide synchronous SRAM interface is required for system architecture. Ensure the design accommodates the 119-pin BGA package constraints and thermal dissipation needs. Verify that the 3.3V core voltage aligns with the target platform power supply specifications and signal integrity requirements.
Part Context
This part belongs to the Renesas 71V67603 series of synchronous SRAM devices. It shares architectural similarities with other members like the 71V65603 and 71V65803, differing primarily in organization and speed grades. The series targets applications demanding low-latency memory access in embedded and communication systems.
Replacement Considerations
Check for direct substitutes such as IDT71V67603S133BGI8. Evaluate alternative packages like TQFP-100 if BGA reflow capabilities are unavailable.
ChipApex | Global Electronic Components Supplier









