71V67603S133BQ

71V67603S133BQ

$18.50
  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:9e0b97d1f6d5 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:4.2 ns

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71V67603S133BQ

Overview

The Renesas Electronics Corporation 71V67603S133BQ is a synchronous single data rate static random-access memory integrated circuit. It provides a storage capacity of 9 Mbit organized as 256K x 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and utilizes a parallel interface. The component is housed in a 165-CABGA package measuring 13x15 mm, designed for surface mount installation.

Feature Summary

  • Supports high-speed synchronous operation at up to 133 MHz
  • Provides wide 36-bit data bus width for efficient data throughput
  • Utilizes Single Data Rate (SDR) technology for standard synchronization

Applications

  • High-performance embedded systems requiring fast memory access
  • Network infrastructure equipment utilizing parallel SRAM interfaces
  • Industrial control systems needing reliable volatile data storage

Procurement Notes

Verify current availability status as this specific part number may be discontinued or subject to limited production runs. Confirm the exact package variant matches design requirements, as suffixes indicate different physical footprints. Check for official replacement recommendations from Renesas due to potential end-of-life status. Ensure compliance with RoHS directives if required by the target application environment.

Selection Notes

Select this component when a 36-bit wide data path is necessary for system architecture compatibility. Consider the 165-pin CABGA package constraints for PCB layout and thermal management. Evaluate the 133 MHz speed requirement against system clock capabilities. Verify that the operating temperature range meets the environmental conditions of the final assembly location.

Part Context

This model belongs to the 71V67603 series of synchronous SRAMs manufactured by Renesas Electronics. The series typically offers various speed grades and packaging options to suit different performance and form factor needs. These devices are generally used in applications demanding high bandwidth and low latency memory solutions.

Replacement Considerations

Official substitutes include the 71V67603S133BQG and 71V67603S133BQI8. These alternatives share similar electrical characteristics but differ in packaging type or moisture sensitivity level specifications.

71V67603S133BQ71V67603S133BQ
$18.50
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