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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V67603S133BQ8 is a synchronous single data rate static random access memory with a total storage capacity of 9 Mbit. The device is organized as 256 k words by 36 bits, providing wide data interfaces suitable for high-performance applications. It supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. The component operates within a supply voltage range of 3.135 V to 3.465 V and features a parallel interface. It is housed in a 165-CABGA package measuring 13x15 mm and is rated for industrial operating temperatures from -40°C to +85°C.
Feature Summary
- Supports high-speed synchronous operation at frequencies up to 133 MHz
- Provides a 36-bit wide data interface for efficient data throughput
- Utilizes Single Data Rate (SDR) technology for standard synchronous control
Applications
- High-performance embedded systems requiring fast memory access
- Industrial equipment with strict temperature tolerance requirements
- Network infrastructure components utilizing wide data buses
Procurement Notes
Verify the specific suffix BQ8 against official datasheets to confirm the 165-CABGA package configuration and lead-free status. Confirm RoHS compliance details directly with the manufacturer or authorized distributors, as regulatory status can vary by production batch. Ensure that the 3.3V power supply specifications align with the target system design before procurement.
Selection Notes
Select this component when a 36-bit wide memory interface is required alongside synchronous timing characteristics. The 133 MHz speed grade offers low latency for demanding processing tasks. Consider the 165-ball BGA footprint for PCB layout constraints and verify thermal management capabilities for the specified industrial temperature range during system integration.
Part Context
This part belongs to the 71V67603 series of synchronous SRAMs manufactured by Renesas Electronics. The series typically includes variants with different access times and packaging options, such as TQFP or other BGA configurations. The 71V67603 designation indicates the core memory architecture and organization common across the family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative devices based on pinout, voltage levels, and timing parameters through official cross-reference tools.
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