71V67603S133BQG

Overview

The Renesas Electronics Corporation 71V67603S133BQG is a 9 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM). It features a memory organization of 256 k x 36 bits and supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. The device operates within a supply voltage range of 3.135 V to 3.465 V and utilizes a parallel interface. It is housed in a 165-CABGA package measuring 13x15 mm, designed for surface mount installation.

Feature Summary

• Supports high-speed synchronous data transfer via a parallel interface architecture.
• Provides wide 36-bit data word width suitable for complex system bus requirements.
• Operates reliably across standard commercial temperature ranges.

Applications

• High-performance embedded systems requiring fast random access memory
• Network infrastructure equipment and communication devices
• Industrial control systems and automation hardware

Procurement Notes

Verify component authenticity through authorized channels due to End-of-Life status. Confirm moisture sensitivity level handling procedures during storage and assembly. Ensure compatibility with existing PCB footprints and power delivery networks before integration into new designs.

Selection Notes

Evaluate the 36-bit data width against system bus architecture requirements. Consider the 133 MHz operational speed for latency-sensitive applications. Assess thermal management needs based on maximum current consumption specifications and ambient operating conditions.

Part Context

This component belongs to the 71V67603 series of high-density SRAMs manufactured by Renesas Electronics. It serves as a volatile memory solution for applications demanding rapid data retrieval and processing capabilities within compact form factors.

Replacement Considerations

Officially documented substitutes include ISSI IS61LPS25636A-200B3LI-TR and ISSI IS64LF25636A-7.5B3LA3. Verify pinout and electrical parameter alignment before substitution.