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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V67603S133BQGI8 is a synchronous single data rate static random access memory integrated circuit. It provides a total storage capacity of 9 Mbit, organized as 256 k words by 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and features a parallel interface. The component is housed in a 165-CABGA package measuring 13x15 mm and is designed for surface mount installation.
Feature Summary
- Supports high-speed synchronous data transfer via a parallel interface architecture
- Provides wide 36-bit data word organization for efficient bus utilization
- Operates reliably across extended industrial temperature ranges
Applications
- High-performance embedded systems requiring fast local memory
- Industrial equipment control units
- Network infrastructure hardware components
Procurement Notes
Verify the specific suffix BQGI8 against official manufacturer documentation to confirm package type and moisture sensitivity level. Ensure compatibility with system voltage requirements and thermal management specifications before integration. Confirm end-of-life status and availability through authorized channels.
Selection Notes
Select this component when a 36-bit wide synchronous SRAM interface is required for high-throughput applications. Consider the 165-pin ball grid array footprint for PCB layout constraints. Evaluate power consumption limits against the maximum current draw specifications during peak operation cycles.
Part Context
This part belongs to the 71V67603 series of synchronous SRAMs from Renesas. It shares architectural similarities with other variants in the family but differs in speed grade and packaging. The series is designed for applications demanding low latency and high bandwidth memory solutions.
Replacement Considerations
Check for direct pin-compatible substitutes such as the 71V67603S150BQG or 71V67603S133PFGI if available. Verify that alternative parts match the 256k x 36 organization and 165-CABGA package dimensions.
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