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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:4.2 ns
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Overview
The IDT71V67603S133PFG is a high-speed synchronous static random-access memory (SRAM) manufactured by Integrated Device Technology, now part of Renesas Electronics. It features a 9 Mbit storage capacity organized as 256K words by 36 bits. The device supports clock frequencies up to 133 MHz with a 4.2 ns access time. It operates on a 3.3V core supply and utilizes a parallel interface. The component is housed in a 100-pin Thin Quad Flat Pack (TQFP) package.
Feature Summary
- Supports high system speeds through synchronous operation at clock frequencies up to 133 MHz.
- Features an internal burst address counter that accepts the first cycle address to initiate sequential data access sequences.
- Includes write, data, address, and control registers for efficient data management.
- Provides pipelined output data availability on subsequent rising clock edges during burst mode operations.
Applications
- High-performance computing systems requiring fast data buffering
- Network infrastructure equipment utilizing synchronous memory interfaces
- Industrial automation controllers needing reliable volatile storage
Procurement Notes
Verify the manufacturer status carefully, as IDT was acquired by Renesas Electronics. Confirm the specific suffix 'PFG' corresponds to the 100-TQFP package and commercial temperature range. Check for obsolescence notices or product change notifications regarding this specific part number before finalizing procurement plans.
Selection Notes
Select this component when a 36-bit wide synchronous SRAM interface is required for data bus alignment. Ensure the design accommodates the 3.3V core voltage and 2.5V I/O requirements if specified. Verify that the 100-pin TQFP footprint fits the PCB layout constraints compared to BGA alternatives in the same family.
Part Context
This device belongs to the 71V67603 series of synchronous SRAMs. It shares architectural similarities with other members like the IDT71V67602 but differs in organization and speed grades. The series is designed for applications demanding high throughput and low latency in parallel memory environments.
Replacement Considerations
Check for direct pin-compatible replacements within the Renesas portfolio. Verify electrical compatibility for any cross-manufacturer substitutes, ensuring voltage levels and timing parameters match the original design specifications.
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