71V67603S133PFG8

Overview

The Renesas Electronics Corporation 71V67603S133PFG8 is a synchronous single data rate (SDR) static random-access memory integrated circuit. It provides a total storage capacity of 9 Mbit, organized as 256K words by 36 bits. The device supports a maximum clock frequency of 133 MHz with a typical access time of 4.2 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 100-pin Thin Quad Flat Package (TQFP) measuring 14x14 mm. The component is designed for surface mount installation and functions reliably across an industrial temperature range from -40°C to +85°C.

Feature Summary

• Supports high-speed parallel data transfer via a synchronous interface architecture
• Provides wide 36-bit data bus width for efficient system integration
• Operates on a standard 3.3 V power supply rail
• Engineered for robust performance in demanding industrial thermal environments

Applications

• High-performance embedded systems requiring fast local memory
• Industrial control units and automation hardware
• Telecommunications infrastructure equipment
• Network switching and routing devices

Procurement Notes

Verify the specific suffix PFG8 to confirm the tape-and-reel packaging format, which differs from tray-packaged variants. Confirm that the 3.3 V operating voltage aligns with your target board design, as this part is distinct from lower-voltage or different organization alternatives. Check current lifecycle status, as availability may be limited due to end-of-life transitions. Ensure moisture sensitivity level handling procedures are followed during assembly to prevent package damage.

Selection Notes

Select this component when a 36-bit wide data path is required for system bus compatibility. The 133 MHz speed class offers sufficient throughput for many embedded applications while maintaining manageable power consumption. Consider the 100-pin TQFP footprint for PCB layout constraints. Evaluate alternative packages like PBGA if higher pin density or different thermal characteristics are needed for the specific enclosure design.

Part Context

This device belongs to the Renesas 71V67603 series of synchronous SRAMs. It shares core architectural features with other members of the family but is distinguished by its specific speed grade, voltage rating, and physical package configuration. The series is designed to provide reliable volatile memory solutions for various computing and communication applications.

Replacement Considerations

Direct substitutes include the 71V67603S133BG and 71V67603S133BGI, which share identical electrical specifications but differ in packaging type. Verify that any replacement matches the 100-pin TQFP form factor if board space is constrained.