71V67603S150BGGI

Overview

The Renesas Electronics Corporation 71V67603S150BGGI is a synchronous single data rate static random access memory integrated circuit. It features a total storage capacity of 9 Mbit organized as 256 k x 36 bits. The device supports a maximum clock frequency of 150 MHz with an access time of 3.8 ns. It operates within a voltage range of 3.135 V to 3.465 V and utilizes a parallel interface. The component is housed in a 165-CABGA package measuring 13x15 mm.

Feature Summary

• Supports high-speed synchronous operation at up to 150 MHz
• Provides wide data bus width for efficient parallel data transfer
• Designed for surface mount installation in compact form factors

Applications

• High-performance computing systems requiring fast memory access
• Network infrastructure equipment utilizing parallel interfaces
• Industrial control systems needing reliable volatile storage

Procurement Notes

Verify the exact package dimensions and pinout configuration against the official datasheet before integration. Confirm that the supply voltage requirements align with the target system design. Check for any specific handling instructions related to moisture sensitivity levels during assembly processes.

Selection Notes

Select this component when a 36-bit wide data path is required for parallel processing applications. Ensure the operating environment stays within the specified temperature and voltage limits. Consider the physical footprint constraints of the 165-CABGA package during board layout planning.

Part Context

This part belongs to the 71V67603 series of synchronous SRAM devices from Renesas. It shares architectural similarities with other variants in the family but differs in speed grade and packaging options. The series is designed for applications demanding high bandwidth and low latency memory solutions.

Replacement Considerations

Public confirmed substitute part numbers include IDT71V67603S150BQG and IDT71V67603S150BGG.