71V67603S150BQG8

71V67603S150BQG8

$17.12
  • Description:IC SRAM 9MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:d7e59ad58502 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:150 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:3.8 ns

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71V67603S150BQG8

Overview

The Renesas 71V67603S150BQG8 is a synchronous single data rate static random-access memory integrated circuit. It provides a total storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device supports a maximum clock frequency of 150 MHz with an access time of 3.8 nanoseconds. It operates on a 3.3-volt power supply within the range of 3.135 to 3.465 volts. The component utilizes a parallel interface and is housed in a 165-ball Column Ball Grid Array package measuring 13 by 15 millimeters.

Feature Summary

  • Supports high-speed parallel data transfer via a synchronous single data rate interface architecture
  • Provides wide 36-bit data bus width for efficient processing integration
  • Operates reliably within standard commercial temperature ranges

Applications

  • High-performance computing systems requiring fast buffer memory
  • Network infrastructure equipment utilizing parallel SRAM interfaces
  • Industrial control systems needing rapid data caching

Procurement Notes

Verify the specific suffix BQG8 against official manufacturer documentation to confirm package dimensions and pinout compatibility. Confirm current production status as this series may be subject to discontinuation notices. Ensure voltage levels match system requirements strictly between 3.135 and 3.465 volts to prevent damage.

Selection Notes

Select this component when a 36-bit wide data path is required for parallel processing applications. The 150 MHz speed rating suits designs needing low latency access times around 3.8 nanoseconds. Consider the 165-ball CBGA package constraints for PCB layout and thermal management during the design phase.

Part Context

This part belongs to the 71V67603 family of synchronous SRAM devices manufactured by Renesas Electronics. The family offers various speed grades and packaging options to accommodate different performance and form factor requirements in embedded memory applications.

Replacement Considerations

Check for IDT71V67603S150BQG8 as a potential equivalent under previous branding. Verify pin-to-pin compatibility and electrical specifications before substitution.

71V67603S150BQG871V67603S150BQG8
$17.12
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