— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
Download product information
Overview
The Renesas Electronics Corporation 71V67603S150PFG8 is a 9Mbit synchronous static random-access memory (SRAM) IC featuring a parallel interface. It is organized as 256K x 36 bits and operates at a maximum clock frequency of 150 MHz with a 3.8 ns access time. The device supports single data rate (SDR) operation and functions within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 165-pin CABGA package measuring 13x15 mm, designed for surface-mount installation.
Feature Summary
- Supports high-speed burst mode operations for efficient data buffering
- Integrates dedicated write, data, address, and control registers
- Utilizes 3.3V CMOS technology for standard logic compatibility
Applications
- High-speed data buffering in communication systems
- Cache memory implementation in embedded processors
- Digital signal processing applications requiring fast random access
Procurement Notes
Verify component authenticity through authorized channels due to obsolete status. Confirm RoHS compliance requirements as the specific variant may not meet current environmental standards. Check for moisture sensitivity level handling procedures during storage and assembly. Validate pinout compatibility with existing PCB layouts before procurement.
Selection Notes
Select this component for designs requiring 36-bit wide data paths and synchronous timing. Ensure the system clock does not exceed 150 MHz. Verify that the 165-CABGA package fits the available board space. Consider power consumption limits given the 280 mA maximum current draw in active states.
Part Context
This part belongs to the 71V67603 series of 3.3V CMOS SRAMs. It shares the 256K x 36 organization with other variants like the 133 MHz version but offers higher speed performance. The series is designed for applications needing large word widths and synchronous interface control.
Replacement Considerations
Public confirmed substitute: 71V67703S85BQI.
ChipApex | Global Electronic Components Supplier








