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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The 71V67603S150PFGI is a synchronous single data rate static random-access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 150 MHz and features an access time of 3.8 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is housed in a 165-CABGA package measuring 13x15 millimeters. The component is rated for commercial temperature ranges from 0°C to 70°C.
Feature Summary
- Supports high-speed synchronous parallel data transfer at up to 150 MHz
- Provides 36-bit wide data bus architecture for efficient word handling
- Operates on standard 3.3-volt power supply specifications
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment utilizing wide data buses
- Industrial control units needing reliable volatile storage
Procurement Notes
Verify the specific suffix PFGI against official Renesas documentation to confirm the exact package type and temperature grade. Confirm RoHS compliance status as manufacturing changes may affect environmental declarations. Check for End-of-Life notices or production discontinuation announcements prior to finalizing procurement plans.
Selection Notes
Select this component when a 36-bit wide synchronous SRAM interface is required for system integration. Ensure the design accommodates the 165-ball BGA footprint and thermal requirements. Compare performance metrics against alternative speeds if lower latency is not critical for the application.
Part Context
This part belongs to the 71V67603 family of synchronous SRAM devices. It shares architectural similarities with other variants in the series but differs in speed grade and packaging. The 150 MHz variant offers higher throughput compared to slower versions while maintaining the same memory organization and pin compatibility within the package family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
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