71V67603S166BQG

71V67603S166BQG

$22.82
  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:4d5214dfd51f Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:3.5 ns

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71V67603S166BQG

Overview

The IDT71V67603S166BQG is a synchronous single data rate static random-access memory integrated circuit manufactured by Renesas Electronics. It provides a total storage capacity of 9 Megabits, organized as 256K words by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 166 MHz and features an access time of 3.5 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is designed for commercial temperature environments ranging from 0°C to 70°C. The component is housed in a 165-ball Column Grid Array package measuring 13x15 millimeters.

Feature Summary

  • Supports high-speed parallel data transfer via synchronous single data rate architecture
  • Provides wide 36-bit data bus organization for efficient system integration
  • Operates on standard 3.3V power supply specifications
  • Utilizes compact surface-mount ball grid array packaging

Applications

  • High-performance networking equipment requiring fast buffer memory
  • Industrial control systems utilizing sensor fusion electronic control units
  • Advanced driver assistance systems in automotive applications
  • Telecommunications infrastructure hardware

Procurement Notes

Verify the specific suffix BQG against official datasheets to confirm the exact package dimensions and pinout configuration. Confirm RoHS compliance status and moisture sensitivity level requirements before procurement. Check for end-of-life notices or product change notifications that may affect long-term availability. Ensure the supplier provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component when a 36-bit wide data path is required for synchronous memory buffering. Compare performance metrics against alternative SRAM families to ensure compatibility with existing system clock speeds. Evaluate thermal management needs based on the specified operating temperature range. Verify that the PCB layout supports the specific ball grid array footprint dimensions.

Part Context

This part belongs to the IDT 71V67603 series of synchronous SRAM devices. The series offers various speed grades and package options to suit different design constraints. Renesas acquired the IDT memory product line, maintaining these components for legacy and current industrial designs. The S166 suffix denotes the specific 166 MHz speed bin within this family.

Replacement Considerations

Official substitutes include the 71V67603S133BQG for lower speed requirements. Cross-reference with ISSI IS61LPS25636A-200B3LI-TR for potential functional equivalents. Verify pin compatibility and electrical characteristics before substituting any component.

71V67603S166BQG71V67603S166BQG
$22.82
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