71V67603S166BQG

Overview

The IDT71V67603S166BQG is a high-speed synchronous static random-access memory (SRAM) device manufactured by Renesas Electronics, formerly IDT. It features a 9 Mbit storage capacity organized as 256K x 36 bits. The component supports a maximum clock frequency of 166 MHz with a 3.5 ns access time. It operates on a 3.3V core power supply and utilizes a 165-pin CABGA package.

Feature Summary

• Supports high system speed with up to 166 MHz clock frequency
• Features self-timed write cycles with global write control
• Includes internal burst address counter for interleaved or linear burst modes
• Provides pipelined outputs for single cycle deselect

Applications

• High-performance computing systems requiring fast data access
• Network infrastructure equipment
• Telecommunications base stations
• Industrial automation controllers

Procurement Notes

Verify the manufacturer designation, as this part is currently produced under Renesas Electronics. Confirm the specific suffix BQG corresponds to the 165-CABGA package. Check for end-of-life status or alternative sourcing options due to potential discontinuation in original IDT lines.

Selection Notes

Select this component for applications requiring 36-bit wide data paths and synchronous interface timing. Ensure the design accommodates the 165-pin ball grid array footprint. Verify voltage compatibility with the 3.3V core and 2.5V I/O requirements if applicable to the specific variant.

Part Context

This device belongs to the IDT 71V676/78 series of synchronous SRAMs. It is functionally related to the IDT71V67602 but offers a 36-bit width configuration compared to the 18-bit option. The series is designed for high-throughput data buffering in complex digital systems.

Replacement Considerations

IDT71V67603S150BQG offers similar functionality at a lower 150 MHz speed. IDT71V67602 variants provide an 18-bit organization instead of 36-bit. Verify pinout and electrical specifications before substitution.