7201LA80TDB

Overview

The Renesas 7201LA80TDB is a 512 x 9 asynchronous FIFO memory device. It operates within a supply voltage range of 4.5 V to 5.5 V. The component features an access time of 80 ns and supports a data rate of 10 MHz. It is housed in a 28-pin Ceramic Dual In-Line Package (CDIP). The maximum supply current is specified at 100 mA. This uni-directional memory unit is designed for first-in/first-out data buffering applications.

Feature Summary

• Asynchronous operation for independent read and write clock domains
• Dual-port architecture enabling simultaneous access
• First-in/first-out data loading and emptying mechanism

Applications

• Data buffering between asynchronous systems
• Level shifting between different voltage domains
• Clock domain crossing interfaces

Procurement Notes

Verify the package type carefully, as TDB denotes a ceramic DIP variant which may differ from plastic equivalents. Confirm moisture sensitivity handling requirements prior to assembly. Check for obsolete status or lifecycle changes with the manufacturer. Ensure pin compatibility with existing footprints if replacing older units. Validate supply voltage specifications against system power rails.

Selection Notes

Select this component when a 512-word by 9-bit depth is required for asynchronous buffering. The 80 ns access time suits moderate-speed applications. Consider the CDIP package constraints for board layout. Compare against other 7201L series variants if faster speeds or different packages are needed. Verify bidirectional vs unidirectional bus requirements.

Part Context

This part belongs to the 7201L series of dual-port FIFO memories from Renesas. These devices are engineered for high-reliability data storage and transfer. The series typically offers robust performance for industrial and communication systems. The 7201LA80TDB specifically provides a balance of speed and capacity in a ceramic package.

Replacement Considerations

IDT7201LA80TDB is a confirmed substitute part number.