72221L25JI

Overview

The Renesas Electronics Corporation 72221L25JI is a 2K x 9 Synchronous First-In, First-Out (FIFO) memory device operating at a 5.0V supply voltage. It features a 10 ns read/write cycle time and supports independent dual-clock operation for asynchronous data transfer between domains. The architecture provides zero fall-through time with programmable Almost-Empty and Almost-Full flags to manage buffer levels effectively. Available in a 32-pin PLCC package, it includes industrial temperature range options (-40°C to +85°C).

Feature Summary

• Supports independent read and write clocks for dual-clock asynchronous operation or tied single-clock mode.
• Features a dual-ported zero fall-through time architecture ensuring immediate data availability upon read enable.
• Includes programmable status flags that can be set to any depth within the memory structure.

Applications

• Graphics data buffering systems
• Local area network interface controllers
• Interprocessor communication links

Procurement Notes

Verify component authenticity through authorized distributors as this part may be obsolete. Confirm lead-free status and specific suffix variations against official discontinuation notices. Ensure compatibility with existing PCB footprints and thermal requirements before finalizing procurement plans.

Selection Notes

Select this component when a 2K x 9 capacity is required for synchronous buffering applications. Verify that the 5.0V logic level matches system requirements. Consider the 32-pin PLCC package constraints and ensure the selected temperature grade meets environmental specifications.

Part Context

This device belongs to the SyncFIFO family of high-speed memory buffers designed for efficient data flow management. It serves as a critical interface element in digital systems requiring temporary storage between asynchronous clock domains or varying data rates.

Replacement Considerations

Consult official Renesas documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical characteristics before transitioning to alternative components.