7433N

Overview

The Rochester Electronics LLC 7433N is a discrete N-channel power MOSFET belonging to the JANSR2N7433 series. It features a TO-254AA package and operates with a drain-source breakdown voltage of 200 V. The device supports a maximum continuous drain current of 35 A at 25°C and 25 A at 100°C, with an on-resistance of 70 mΩ at 25°C. Designed for radiation-hardened applications, it withstands up to 100 Krad(Si) total ionizing dose. Key electrical parameters include a gate charge of 290 nC and a forward voltage of 1.8 V.

Feature Summary

• Radiation-hardened design suitable for high-radiation environments
• High-voltage capability with 200 V breakdown rating
• Robust thermal performance in TO-254AA package

Applications

• Spacecraft power distribution systems
• Military-grade switching regulators
• High-reliability industrial motor drives

Procurement Notes

Verify component authenticity through official manufacturer documentation or authorized distributors. Confirm lot traceability and radiation testing certificates are included. Ensure the part matches the specific JANSR2N7433 designation to guarantee compliance with required military and aerospace standards.

Selection Notes

Select this component when high radiation tolerance and robust voltage handling are critical. The TO-254AA package provides superior thermal dissipation compared to smaller surface-mount options. Evaluate thermal management requirements carefully given the high current capabilities and on-resistance characteristics.

Part Context

This part is a rad-hardened variant of the standard 2N7433 MOSFET. Manufactured under strict quality controls, it meets DLA certification requirements. The JANS prefix indicates qualification for space and defense applications requiring enhanced reliability and environmental stability.

Replacement Considerations

Direct substitutes include other JANS-rated 2N7433 variants from qualified manufacturers. Verify pinout compatibility and radiation hardness levels before substitution.