74HC10DB,112

Overview

The 74HC10DB,112 is a triple 3-input NAND gate manufactured by Nexperia. It operates within a supply voltage range of 2.0 V to 6.0 V and supports an ambient temperature range from -40 °C to +125 °C. The device utilizes CMOS input levels and features ESD protection exceeding 2000 V (HBM) and 1000 V (CDM). Propagation delay ranges from 9 ns to 25 ns depending on voltage and load conditions.

Feature Summary

• Triple 3-input NAND logic function
• CMOS compatible input levels
• High electrostatic discharge protection

Applications

• General digital logic processing
• Signal gating applications
• Industrial control systems

Procurement Notes

Verify the specific ordering suffix '112' against current Nexperia documentation to confirm package type and availability status. Confirm that the component meets all required JEDEC standards for your specific application environment before finalizing procurement plans.

Selection Notes

Select this component when a triple 3-input NAND gate with wide voltage operation is required. Ensure the design accommodates the specified propagation delays and output drive capabilities under maximum load conditions.

Part Context

This part belongs to the 74HC/HCT10 family of high-speed Si-gate CMOS devices. It is pin-compatible with low power Schottky TTL (LSTTL) standards, facilitating integration into legacy or mixed-technology circuit designs requiring standard NAND functionality.

Replacement Considerations

Check for updated package options such as TSSOP14 if SO14 is unavailable. Verify compatibility with other manufacturers' 74HC10 equivalents ensuring identical pinout and electrical specifications.