74HC2G00DP,125

Overview

The Nexperia 74HC2G00DP,125 is a dual 2-input NAND gate manufactured in the TSSOP8 (SOT505-2) package. It operates within a supply voltage range of 2.0 V to 6.0 V and supports an ambient temperature range from -40 °C to +125 °C. The device features CMOS input levels, symmetrical output impedance, and high noise immunity. Static characteristics include a maximum low-level output current of 5.2 mA and a maximum high-level output current of -5.2 mA at 6.0 V. Dynamic performance specifies a typical propagation delay of 9 ns at 4.5 V and 7 ns at 6.0 V.

Feature Summary

• CMOS technology providing low power dissipation and high noise immunity
• Inputs equipped with clamp diodes for interfacing voltages exceeding VCC
• ESD protection compliant with ANSI/ESDA/JEDEC standards

Applications

• General-purpose digital logic processing
• Signal gating and switching circuits
• Portable battery-powered electronic devices

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm compliance with RoHS directives and REACH regulations prior to integration. Ensure design margins account for the specified absolute maximum ratings to prevent permanent damage during operation or storage conditions.

Selection Notes

Select this component when a compact dual NAND solution is required for standard CMOS logic applications. The wide supply voltage range accommodates various system architectures. Verify that the TSSOP8 footprint aligns with the target PCB layout constraints and thermal management requirements.

Part Context

This part belongs to the Nexperia 74HC/HCT2G series of miniaturized logic gates. It provides two independent NAND functions in a space-saving surface-mount package. The series is designed to replace larger through-hole equivalents while maintaining standard logic compatibility and performance metrics.

Replacement Considerations

Cross-reference with other manufacturers offering equivalent 74HC2G00 specifications in TSSOP8 packages. Ensure pinout compatibility and electrical parameter alignment before substitution.