74HC7403D-Q100,518

FIFOs Memory Overview

The 74HC7403D-Q100,518 is a First-In First-Out (FIFO) memory organized as 64 words by 4 bits. It supports synchronous and asynchronous data transfers with separate shift-in and shift-out controls. The device features 3-state outputs and status flags for data readiness. It operates within a supply voltage range of 2.0 V to 6.0 V and is qualified to AEC-Q100 Grade 1 standards.

FIFOs Memory Feature Summary

• Expandable FIFO architecture supporting parallel and serial cascading
• Independent shift-in and shift-out operations for flexible data transfer
• Data-in-ready and data-out-ready status flags for flow control
• Input clamp diodes enabling interface to voltages exceeding VCC

FIFOs Memory Applications

• High-speed disc or tape controllers
• Communications buffers

FIFOs Memory Procurement Notes

Verify the specific ordering suffix

FIFOs Memory Selection Notes

Select this component for applications requiring expandable 4-bit wide FIFO buffering. Ensure the design accommodates the SO16 package dimensions and utilizes the DIR and DOR flags for proper synchronization in synchronous mode or burst-mode operation for maximum throughput.

FIFOs Memory Part Context

This part belongs to the 74HC7403-Q100 series of automotive-grade logic devices. It is manufactured by NXP Semiconductors and complies with JEDEC standard JESD7A. The device is designed for robust performance in demanding environments, featuring high ESD protection capabilities.

FIFOs Memory Replacement Considerations

The 74HCT7403D-Q100 serves as a functional alternative with TTL-compatible input levels instead of CMOS levels.