74HCT10N,652

Overview

The NXP USA Inc. 74HCT10N,652 is a triple 3-input NAND gate from the HCT logic family. It operates within a supply voltage range of 4.5 V to 5.5 V and supports an ambient temperature range of -40 °C to +125 °C. The device features TTL-level input compatibility and includes input clamp diodes for interfacing with voltages exceeding VCC. It provides ESD protection exceeding 2000 V (HBM) and 1000 V (CDM). Propagation delay is specified at 36 ns maximum under standard test conditions.

Feature Summary

• Triple 3-input NAND logic function
• TTL-compatible input levels
• Input clamp diodes for overvoltage protection
• High electrostatic discharge robustness

Applications

• General-purpose digital logic circuits
• Signal processing applications requiring NAND gating
• Industrial control systems operating in extended temperature ranges

Procurement Notes

Verify that the specific part number suffix matches the required package type, as the datasheet lists SO14 and TSSOP14 variants. Confirm the manufacturer designation aligns with current Nexperia or NXP branding standards. Ensure compliance with JEDEC JESD7A specifications is documented for your application requirements.

Selection Notes

Select this component when TTL-level inputs are required alongside CMOS performance characteristics. The HCT series ensures compatibility with legacy TTL logic families while offering improved speed. Consider the wide operating temperature range for environments subject to thermal extremes.

Part Context

This component belongs to the 74HCT logic family, designed to bridge the gap between low-power Schottky TTL and CMOS technologies. It maintains pin compatibility with LSTTL devices while providing higher noise immunity and lower power consumption than older bipolar counterparts.

Replacement Considerations

Cross-reference with other 74HCT10 variants from different manufacturers to ensure functional equivalence. Verify package dimensions and pinout configurations match existing board layouts before substitution.