935121723510-T3N

Overview

The Murata Electronics 935121723510-T3N is a silicon RF capacitor utilizing thin film technology, designed for low profile and high-temperature applications. It features a capacitance of 10 nF with a voltage rating of 30 V and a tolerance of ±15%. The component operates within a temperature range of -55°C to +150°C. Its physical dimensions are 0.8 mm in length, 0.6 mm in width, and 0.1 mm in height, corresponding to the 0201 package outline. The device belongs to the LPSC series.

Feature Summary

• Utilizes thin film silicon technology for RF applications
• Designed for low profile and high-temperature environments
• Supports operation up to 150°C

Applications

• RF circuit integration
• High-temperature electronic systems
• Low profile device implementation

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct specifications. Confirm that the requested part matches the required capacitance, voltage, and tolerance values. Check for any specific handling requirements associated with thin film silicon capacitors during procurement processes.

Selection Notes

Select this component when a low profile silicon capacitor is required for RF applications. Ensure the operating environment supports temperatures up to 150°C. Verify that the 0201 footprint and electrical ratings align with the design constraints before finalizing the selection.

Part Context

This component is part of Murata's silicon capacitor portfolio, specifically the LPSC series. It represents a thin film solution distinct from traditional ceramic or electrolytic types. The product line focuses on providing reliable performance in demanding thermal conditions while maintaining a minimal physical profile.

Replacement Considerations

Consult official substitution lists for compatible parts. Cross-reference technical parameters such as capacitance, voltage rating, and package dimensions to ensure functional equivalence without modifying the circuit design.