935142837522-T3T

Overview

The Murata Electronics 935142837522-T3T is a silicon RF capacitor from the WBSC series, designed for high-frequency applications. It features a capacitance of 0.022 µF with a breakdown voltage of 30 VDC. The component utilizes thin-film technology and is housed in a 0402 (1005 Metric) surface-mount package. It supports wirebonding termination and operates within a temperature range of -55°C to 150°C.

Feature Summary

• Wirebondable construction for flexible interconnection options
• Thin-film silicon technology for stable RF performance
• High-temperature capability suitable for demanding environments

Applications

• RF circuit decoupling
• High-frequency signal filtering
• Wirebonded module integration

Procurement Notes

Verify the specific ordering suffix and tape cavity orientation when sourcing. Ensure the procurement channel provides official documentation matching the WBSC series specifications. Confirm that the received components align with the 0402 footprint and wirebondable termination requirements for your design.

Selection Notes

Select this component for designs requiring wirebond compatibility alongside standard SMT footprints. Consider the 30 VDC rating and 0.022 µF value against circuit impedance needs. Evaluate the 0402 size constraint against available board space and thermal management requirements for high-frequency operation.

Part Context

This part belongs to Murata's silicon capacitor portfolio, specifically the WBSC series optimized for RF and microwave applications. It combines the stability of silicon dielectric with the flexibility of wirebonding, distinguishing it from standard ceramic or polymer capacitors in high-performance modules.

Replacement Considerations

Direct substitutes must match the 0.022 µF capacitance, 30 V rating, 0402 package, and wirebondable feature. Verify electrical parameters and physical dimensions before substitution to ensure compatibility with existing RF layouts.