SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Murata Electronics 935146050510-T3T is a wire-bondable vertical silicon capacitor designed for high-frequency applications. It features a 10 nF capacitance with a 100 V breakdown voltage rating. The component utilizes a 0303 package footprint and employs thin-film silicon technology to ensure low leakage current and high stability across temperature and voltage variations. It exhibits negligible capacitance loss through aging, making it suitable for precision RF circuits requiring ultra-low profile dimensions.
Verify the specific ordering suffix against official Murata documentation to confirm pinout and bonding compatibility. Ensure that the selected variant matches the required breakdown voltage and capacitance tolerance for the target application. Cross-reference the datasheet revision history to confirm material compliance and manufacturing origin details prior to procurement.
Select this component when an ultra-low profile solution is required for high-frequency signal conditioning. The vertical silicon architecture offers superior thermal stability compared to standard ceramic alternatives. Evaluate the 0303 footprint constraints to ensure adequate clearance for wire bonding processes during assembly.
This part belongs to Murata's WBSC/WLSC series of vertical silicon capacitors. These components are engineered to replace traditional surface-mount devices in space-constrained designs. The series emphasizes reliability and consistent performance in demanding RF environments where standard MLCCs may exhibit dielectric absorption or aging effects.
No public confirmed substitute part numbers are available in the provided documentation.