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The Murata Electronics 935146632327-W0T is a silicon RF capacitor with a capacitance of 270 pF and a breakdown voltage of 50 V. Designed for high-frequency applications, it supports a maximum operating frequency of 26 GHz. The component operates within a temperature range of -55°C to 150°C. It features a nonstandard chip footprint measuring 0.25 mm in width. This thin-film device is wire-bondable, offering low profile characteristics suitable for compact RF circuit integration.
Verify the specific package dimensions against the official datasheet, as the nonstandard chip size differs from standard SMD footprints. Confirm that the wire-bondable terminal configuration matches your assembly process requirements. Ensure the 50 V breakdown rating meets the circuit's peak voltage demands. Check for RoHS compliance status if environmental regulations apply to your deployment.
Select this component when wire bonding is required instead of surface mounting. The 270 pF value and 50 V rating must align with the target RF impedance and voltage levels. Consider the 26 GHz frequency limit for signal integrity. The wide temperature range supports operation in harsh environments. Verify the physical width constraint fits the available board area.
This part belongs to Murata's silicon capacitor portfolio, specifically designed for RF applications. It utilizes thin-film technology to achieve performance superior to traditional ceramic capacitors in high-frequency scenarios. The series emphasizes reliability and stability for critical communication systems.
No public confirmed substitute part numbers are available in the provided documentation.