935146831510-T3T

Overview

The Murata Electronics 935146831510-T3T is a silicon RF capacitor from the WLSC series, designed for high-reliability applications. It features a capacitance of 10 nF (10000 pF) with a tolerance of ±15% and a breakdown voltage of 30 V. The component utilizes a vertical low-profile package measuring 0.5 mm x 0.5 mm x 0.1 mm (0202 metric). It operates within a temperature range of -55°C to +150°C and exhibits an equivalent series resistance (ESR) of 50 mOhms.

Feature Summary

• Vertical wire-bondable construction enables direct integration into RF modules without soldering.
• Low-profile design supports space-constrained wireless communication hardware.
• Silicon thin-film technology ensures stability under high-power RF conditions.

Applications

• RF front-end modules in 5G wireless communication devices
• High-power radar systems
• Wireless communication transceivers

Procurement Notes

Verify the specific suffix T3T against official Murata documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with wire-bonding processes required for this vertical package type. Cross-reference the WLSC series designation to validate the silicon dielectric characteristics and thermal performance limits for the intended application environment.

Selection Notes

Select this component when vertical integration and wire-bonding capabilities are required for RF circuits. The 0.1 mm height is critical for ultra-low profile designs. Consider the 150°C maximum operating temperature for high-thermal environments. Verify that the 30V breakdown rating meets the circuit's peak voltage requirements before implementation.

Part Context

This part belongs to the WLSC series of silicon capacitors, which are distinct from traditional ceramic MLCCs. The WLSC line targets RF applications requiring high power handling and reliability. Unlike standard surface-mount components, these utilize a vertical structure optimized for wire bonding rather than reflow soldering.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As a specialized vertical silicon capacitor, direct replacements may require redesigning the interconnect scheme to accommodate wire-bonding interfaces instead of standard SMT pads.