935156722410-T3S

Overview

The Murata 935156722410-T3S is a silicon RF capacitor in the UBSC series, utilizing semiconductor thin-film technology. It features a capacitance of 1000 pF with ±15% tolerance and a rated DC voltage of 30 V. The component operates within a temperature range of -55°C to +150°C. Its physical dimensions are 0.60 mm x 0.30 mm x 0.10 mm (0201 package). Key electrical characteristics include low leakage current (<100pA) and high breakdown voltage.

Feature Summary

• Utilizes semiconductor silicon thin-film process for superior stability
• Provides high phase stability and low reflection across wide bandwidths
• Features ultra-low equivalent series inductance for high-frequency performance
• Supports high operating temperatures up to 150°C

Applications

• High-frequency signal coupling and bypassing
• RF matching networks in wireless communication systems
• Broadband filtering applications
• DC blocking circuits in high-speed data links

Procurement Notes

Verify the specific part number against official Murata documentation to confirm the 30V rating and 1000pF value. Ensure the T3S suffix matches the required tape and reel packaging configuration. Cross-reference the RoHS compliance status and lead-free specifications with the latest datasheet to meet environmental standards. Confirm that the 0201 footprint aligns with the target PCB design constraints.

Selection Notes

Select this component when high phase stability and low insertion loss are critical for RF signal integrity. The 30V rating provides adequate headroom for many RF biasing scenarios. The 0201 size is suitable for dense layouts requiring minimal parasitic effects. Consider the 150°C thermal rating for environments exceeding standard industrial limits.

Part Context

This part belongs to Murata's UBSC/UBEC series of silicon capacitors, designed specifically for RF and microwave applications. Unlike traditional ceramic capacitors, these devices use silicon technology to achieve consistent performance over frequency and temperature. They are engineered to minimize parasitic inductance and resistance, making them ideal for high-frequency circuit designs where signal fidelity is paramount.

Replacement Considerations

Direct substitutes may include other Murata silicon capacitors from the same series with similar capacitance and voltage ratings. Verify compatibility by comparing the S-parameters and impedance characteristics. Alternative technologies like MLCCs may require significant circuit redesign due to differences in parasitic behavior and frequency response.