939113793522-T3N

Silicon Capacitors Overview

The Murata 939113793522-T3N is a silicon RF capacitor with a capacitance of 0.022 µF and a breakdown voltage of 30 V. It utilizes thin-film technology for high-frequency applications, offering low equivalent series inductance (ESL) and ultra-broadband performance. The component operates within a temperature range of -55°C to +150°C and features a 0201 surface-mount package.

Silicon Capacitors Feature Summary

• Thin-film silicon construction for high reliability
• Low ESL design for high-frequency signal integrity
• Ultra-broadband frequency response capabilities

Silicon Capacitors Applications

• High-frequency RF circuits
• Broadband signal coupling
• High stability filtering applications

Silicon Capacitors Procurement Notes

Verify the specific metallization finish required for your assembly process, as standard delivery includes NiAu (ENIG). Confirm that the 0201 footprint matches your PCB layout constraints. Ensure thermal management strategies account for the wide operating temperature range up to 150°C during integration.

Silicon Capacitors Selection Notes

Select this component when low ESL and broadband performance are critical for high-frequency designs. The 0.022 µF value suits specific impedance matching needs. Consider the 0201 size for compact layouts requiring high stability in demanding thermal environments.

Silicon Capacitors Part Context

This part belongs to Murata's silicon capacitor family, designed specifically for RF and microwave applications. Unlike ceramic alternatives, these silicon-based components provide superior stability and lower parasitic inductance, making them suitable for advanced communication systems requiring precise signal handling.

Silicon Capacitors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.