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The A6387DTR is a high-voltage half-bridge gate driver manufactured using BCD offline technology, designed for automotive applications. It integrates high-side and low-side drivers for N-channel Power MOSFETs or IGBTs. The high-side floating section withstands up to 550 V. Logic inputs are CMOS/TTL compatible. Key electrical parameters include a dV/dt immunity of ±50 V/nsec across the full temperature range. Driver current capabilities are 400 mA source and 650 mA sink. Switching times with a 1 nF load are 50 ns rise and 30 ns fall. Operating voltage ranges from 6.3 V to 17 V, with a junction temperature range of -40°C to 125°C.
Verify the specific ordering suffix 'DTR' corresponds to the tape and reel packaging configuration required for your assembly process. Confirm that the AEC-Q100 qualification status meets your automotive reliability standards. Ensure the 8-SOIC package dimensions align with your PCB footprint specifications before finalizing procurement orders.
Select this component when a single-chip solution for high-voltage half-bridge driving is required. The integrated bootstrap diode and interlocking features reduce external component requirements. Verify that the input logic levels match your controller outputs and that the thermal performance supports your operating environment within the specified junction temperature range.
The A6387DTR belongs to the A6387 family of high-voltage gate drivers from STMicroelectronics. It utilizes BCD offline technology to integrate high-voltage and low-voltage functions on a single chip. This family is specifically engineered for automotive applications requiring robust performance and high reliability under extreme electrical and thermal conditions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for potential cross-references or updated product line replacements.