Antennas RF A6G35S006NT6 product image

A6G35S006NT6

$9.04
  • Description:IC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)

SKU:926f8dae9683 Category: Brand:

  
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A6G35S006NT6 is listed in the Antennas RF range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is IC. Review the specifications below when checking this part for your BOM.

Antennas RF specifications for A6G35S006NT6

  • Description:IC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • RF Family/Standard:-
  • Frequency Group:-
  • Frequency (Center/Band):-
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  • Antenna Type:-
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Antennas RF datasheet and documents for A6G35S006NT6

A6G35S006NT6

Antennas RF Overview

The A6G35S006NT6 is an Airfast RF Power GaN transistor from NXP Semiconductors, designed for cellular base station applications. It operates within the frequency range of 2496 to 5000 MHz. The device delivers a typical average power of 28 dBm and supports up to 10 W peak RF power. It requires a 48 Vdc supply voltage with a quiescent current (IDQ) of 24 mA. The component features a gain of 16.8 dB and is housed in a surface-mount package suitable for high-frequency RF power amplification tasks.

Antennas RF Feature Summary

  • Utilizes Gallium Nitride (GaN) technology for high-efficiency RF power amplification
  • Optimized for cellular base station architectures covering 2.496–5 GHz bands
  • Designed for robust performance under 48 Vdc operating conditions

Antennas RF Applications

  • Cellular base station power amplifiers
  • Active antenna systems
  • RF power modules for wireless infrastructure

Antennas RF Procurement Notes

Verify the exact suffix 'T6' against official NXP documentation to confirm packaging and tape-and-reel specifications. Confirm lifecycle status as obsolete before integration into new designs. Ensure compatibility with existing thermal management solutions for GaN devices. Cross-reference pinout diagrams with the specific datasheet version to avoid interface mismatches during PCB layout.

Antennas RF Selection Notes

Select this component for applications requiring high linearity and efficiency in the 2.5–5 GHz range. Consider the 48 V supply requirement when designing bias networks. Evaluate thermal dissipation needs due to GaN characteristics. Compare gain and power metrics against alternative GaN transistors if newer generations are available. Ensure system impedance matches the 50-ohm reference standard specified in design guidelines.

Antennas RF Part Context

This part belongs to NXP's Airfast series of RF power transistors, which leverage GaN-on-SiC technology for superior performance compared to traditional LDMOS devices. The series targets demanding wireless infrastructure markets where size, weight, and power efficiency are critical constraints. Similar parts in the lineup may vary in frequency coverage or output power levels.

Antennas RF Replacement Considerations

The part status is listed as obsolete by distributors. Check NXP's official substitution guide for direct replacements or next-generation equivalents. Verify that any substitute maintains compatible pinouts, thermal profiles, and electrical parameters such as gain and breakdown voltage.

A6G35S006NT6A6G35S006NT6
$9.04
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