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The ACT108-600D/DG,126 is a silicon-controlled rectifier manufactured by WeEn Semiconductors. It features an RMS on-state current of 800 mA and a rated repetitive peak off-state voltage of 600 V. The device has a maximum off-state leakage current of 50 uA at VDRM and a non-repetitive on-state peak current capability of 9 A. Key gate parameters include a maximum gate peak reverse voltage of 5 V, a gate trigger voltage of 500 mV, and a gate trigger current of 50 uA. It operates within a temperature range up to +125 C and utilizes a TO-92-3 through-hole package.
Verify the specific suffix (DG,126) against official WeEn Semiconductors documentation to confirm exact marking and packaging specifications. Ensure compatibility with existing PCB footprints for the TO-92-3 package. Cross-reference datasheet revisions to confirm parameter consistency. Confirm RoHS compliance status directly from the manufacturer's latest release notes before finalizing procurement orders.
Select this component when a sensitive gate SCR is required for low-power AC control applications. The 800 mA RMS rating suits moderate load currents. The TO-92-3 package is appropriate for through-hole assembly processes. Consider the 600 V voltage rating for standard line voltage applications. Evaluate thermal management requirements given the +125 C maximum operating temperature limit for the specific circuit environment.
This part belongs to the ACT108 series of silicon-controlled rectifiers from WeEn Semiconductors. The series focuses on sensitive gate technology for efficient triggering. The ACT108-600D variant specifically addresses 600 V blocking requirements. The DG,126 suffix indicates specific manufacturing and packaging details defined by the manufacturer for this particular orderable part number within the broader thyristor product family.
Public confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides or manufacturer documentation for verified alternatives.