ACT43750-101T

Overview

The ACT43750-101T is a highly integrated Power Management IC (PMIC) designed for RF GaN power amplifiers. It combines a drain switch and negative gate voltage regulator to enable ultra-fast switching. The device operates with a 12V supply and features an insertion loss of 1.5 dB. It supports a maximum supply voltage of 55 V and utilizes a 37-pin QFN package measuring 5x5 mm with a 0.4 mm pitch. This component serves as an RF bias controller and sequencer, optimizing performance in wireless applications.

Feature Summary

• Integrates drain switch and negative gate voltage regulator for RF GaN PA control
• Enables ultra-fast switching capabilities for power amplifier efficiency
• Functions as an RF bias controller and sequencer within a compact footprint

Applications

• RF GaN power amplifier drain switching
• Negative gate voltage regulation for RF transistors
• Wireless communication system bias control

Procurement Notes

Verify the specific ordering suffix and package variant against the official Qorvo datasheet before procurement. Confirm that the 37-pin QFN configuration matches the design requirements for creepage distance and high-voltage isolation. Ensure compatibility with the intended RF GaN PA architecture regarding voltage levels and switching speeds.

Selection Notes

Select this component when designing systems requiring integrated PMIC solutions for RF GaN power amplifiers. It is suitable for applications needing precise negative gate regulation and fast drain switching. Consider the 37-QFN package constraints and the 12V supply requirement during PCB layout and thermal management planning.

Part Context

The ACT43750 series belongs to Qorvo's portfolio of RF Switch ICs and Wireless & RF Integrated Circuits. It is specifically categorized under RF Misc ICs and Modules. The part is manufactured by Qorvo and is available in reel packaging, typically containing 3000 units per factory pack.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.