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The ACTT2S-800ETNJ is a bidirectional thyristor (triac) manufactured by WeEn Semiconductors, designed for AC power switching applications. It features an RMS on-state current of 2 A and a non-repetitive peak on-state current of 18 A. The device supports a rated repetitive peak off-state voltage of 800 V with a maximum off-state leakage current of 10 uA at VDRM. Key electrical parameters include an on-state voltage of 2 V, a maximum holding current of 10 mA, a gate trigger voltage of 800 mV, and a gate trigger current of 10 mA. It operates within a maximum junction temperature range of +150 C and is housed in a SOT-223-3 package.
Verify the specific ordering suffix and marking configuration against the official datasheet before procurement. Confirm that the SOT-223-3 package variant matches the intended PCB footprint and soldering profile requirements. Ensure compliance with RoHS directives as specified in the manufacturer's documentation.
Select this component when a 2 A RMS current rating and 800 V blocking voltage are required in a compact surface-mount form factor. Compare the 10 mA gate trigger current against available driver outputs to ensure sufficient triggering capability. Evaluate thermal management needs given the +150 C maximum operating temperature limit.
This triac belongs to the ACTT series from WeEn Semiconductors, which focuses on small-signal AC power switching solutions. The series offers various current ratings and package options to suit different power density requirements. The ACTT2S-800ETNJ specifically targets applications needing moderate current handling in space-constrained designs.
Check for direct pin-compatible alternatives within the same ACTT series or equivalent SOT-223-3 triacs from other manufacturers. Verify that substitute parts meet or exceed the 2 A RMS current, 800 V voltage rating, and 10 mA gate trigger specifications.
The maximum holding current (Ih) is 10 mA.
No, it is designed for surface-mount installation using the SOT-223-3 package.
The gate trigger voltage (Vgt) is typically 800 mV.