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The ACTT8X-800CTNQ is a bidirectional thyristor manufactured by WeEn Semiconductors, designed for high-performance power switching applications. It features an RMS on-state current of 8 A and a non-repetitive peak on-state current of 80 A. The device supports a rated repetitive off-state voltage (VDRM) of 800 V with an on-state voltage of 1.3 V. Gate triggering requirements include a maximum gate trigger voltage (Vgt) of 800 mV and a gate trigger current (Igt) of 30 mA. The holding current (Ih) maximum is 35 mA. Operating within a temperature range from -40°C to +125°C, it utilizes a TO-220F-3 through-hole package.
Verify the specific suffix 'Q' against official manufacturer documentation to confirm packaging or qualification variations. Confirm RoHS compliance status directly with the supplier. Ensure the TO-220F-3 package dimensions match the target PCB footprint. Validate thermal management requirements for the specified operating temperature range before finalizing procurement.
Select this component when an 8 A RMS current rating and 800 V blocking voltage are required in a through-hole configuration. Consider the 800 mV gate trigger voltage for compatibility with standard logic-level drivers. Evaluate the thermal dissipation capabilities of the TO-220F-3 package relative to the expected load profile and ambient temperature constraints.
This part belongs to the ACTT8X series of bidirectional thyristors from WeEn Semiconductors. The series is engineered for general-purpose AC power switching. The specific model integrates planar passivation technology to enhance durability. It serves as a core switching element in medium-power electronic circuits requiring reliable bidirectional conduction.
Cross-reference with other WeEn Semiconductors triacs sharing the 8 A / 800 V specification and TO-220F-3 package. Verify pinout compatibility and thermal characteristics before substituting. Ensure any alternative device meets the same gate trigger current and voltage thresholds for circuit stability.
No, this device is designed to commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber circuit.
The maximum operating junction temperature is +125°C.
Yes, the planar passivated design provides high noise immunity and handles high static and dynamic dV/dt conditions effectively.