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Product Detailed Parameters
- Description:DIODE SIL CARB 1200V 33A TO2522
- Series:WBG
- Mfr:Analog Power Inc.
- Package:Tape & Reel (TR)
- Technology:SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):1200 V
- Current - Average Rectified (Io):33A
- Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
- Speed:No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):-
- Current - Reverse Leakage @ Vr:2 µA @ 1200 V
- Capacitance @ Vr, F:6.3pF @ 0V, 100kHz
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package:TO-252-2
- Operating Temperature - Junction:-55°C ~ 175°C
- Grade:-
- Qualification:-
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Overview
The ADC4D10120E is a silicon carbide Schottky diode manufactured by Analog Power Inc. It features a 1200 V repetitive peak reverse voltage and a 10 A average forward current rating at 25°C case temperature. The device exhibits a typical forward voltage of 1.8 V at 10 A. Thermal resistance ratings are 3 °C/W junction-to-case and 40 °C/W junction-to-ambient. Operating junction temperature ranges from -40°C to 120°C, with a storage temperature range of -55°C to 150°C.
Feature Summary
- Utilizes silicon carbide material for high-performance operation
- Features very low junction capacitance for reduced switching losses
- Demonstrates highly stable forward voltage and reverse recovery characteristics at elevated temperatures
- Designed for easy paralleling due to consistent electrical properties
Applications
- Soft switching topologies
- Secondary side rectification
Procurement Notes
Verify the specific manufacturer designation as Analog Power Inc., distinct from Wolfspeed or other semiconductor entities offering similar part numbers. Confirm the package type matches the Direct WGB form factor required for your thermal management design. Ensure the component meets the intended operating temperature range specifications before integration into the final system architecture.
Selection Notes
Select this component when high-voltage blocking capability and low reverse leakage are critical. The silicon carbide construction supports efficient operation in high-frequency environments. Evaluate the thermal resistance values against your heatsinking strategy to ensure the junction temperature remains within the specified maximum limits during continuous operation.
Part Context
This component belongs to the category of wide-bandgap power semiconductors. Silicon carbide diodes offer superior performance compared to traditional silicon counterparts in high-voltage applications. The Direct WGB package facilitates surface mounting while providing robust thermal dissipation capabilities essential for power conversion systems.
Replacement Considerations
Public confirmed substitute part numbers: C4D10120D.
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