ADC4D10120H

$11.13

Description：DIODE SIC 1.2KV 31.5A TO2472
Series：WBG
Mfr：Analog Power Inc.
Package：Tube

SKU:fc9e8c0303c2 Category: Single Diodes Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIC 1.2KV 31.5A TO2472
Series：WBG
Mfr：Analog Power Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：31.5A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 2 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：2 µA @ 1200 V
Capacitance @ Vr, F：6.3pF @ 0V, 100kHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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ADC4D10120H

Overview

The Analog Power ADC4D10120H is a silicon carbide (SiC) Schottky diode rated for 1200 V repetitive peak reverse voltage and 10 A average forward current. It features a TO-247-2L package with a maximum junction temperature of 175°C. Key electrical parameters include a typical forward voltage of 1.8 V at 10 A, a reverse leakage current of 2 µA at 1200 V, and a thermal resistance from junction to case of 4.1 °C/W. The device supports a single pulse forward current of 50 A and has a power dissipation rating of 37 W.

Feature Summary

Utilizes silicon carbide material for high-performance switching capabilities
Designed for easy paralleling in high-current applications
Exhibits highly stable forward voltage and reverse recovery characteristics at elevated temperatures
Features very low junction capacitance for reduced switching losses

Applications

Soft switching topologies
Secondary side rectification

Procurement Notes

Verify the specific datasheet revision (DS_ADC4D10120H_1A) as the document is marked preliminary. Confirm that the TO-247-2L package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance under actual operating conditions rather than idealized test environments.

Selection Notes

Select this component when designing circuits requiring high-voltage blocking capability combined with low forward voltage drop. The wide bandgap material allows operation at higher temperatures compared to silicon alternatives. Consider the thermal resistance values when calculating heat sink requirements for continuous operation near the maximum current rating.

Part Context

This component belongs to the family of direct wide bandgap diodes manufactured by Analog Power. It serves as a replacement for traditional silicon fast-recovery diodes in high-efficiency power conversion systems. The TO-247-2L form factor facilitates through-hole mounting on standard heatsinks.