ADE4D20120G

$19.13

Description：DIODE SIL CARB 1200V 56A TO2632
Series：WBG
Mfr：Analog Power Inc.
Package：Tape & Reel (TR)

SKU:69b814a0b5c9 Category: Single Diodes Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 1200V 56A TO2632
Series：WBG
Mfr：Analog Power Inc.
Package：Tape & Reel (TR)
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：56A
Voltage - Forward (Vf) (Max) @ If：1.85 V @ 20 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：20 µA @ 1200 V
Capacitance @ Vr, F：12pF @ 0V, 100kHz
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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ADE4D20120G

Overview

The ADE4D20120G is a 1200-V wide bandgap diode manufactured by Analog Power Inc. It features an average forward current of 20 A at 25°C case temperature and supports a single pulse forward current of 90 A. The device exhibits a typical forward voltage of 1.85 V at 20 A. Thermal resistance ratings are 1.35 °C/W junction-to-case and 40 °C/W junction-to-ambient. Operating parameters include a maximum junction temperature of 175°C and a storage temperature range from -55°C to 175°C.

Feature Summary

Utilizes silicon carbide technology for high-performance switching capabilities
Demonstrates highly stable forward voltage and reverse recovery characteristics at elevated temperatures
Features very low junction capacitance suitable for high-frequency applications
Designed for easy paralleling due to positive temperature coefficient behavior

Applications

Soft switching topologies
Secondary side rectification

Procurement Notes

Verify the component against the official Analog Power datasheet DS_ADE4D20120G_1A to confirm specifications. Ensure that the TO-263 package dimensions and thermal resistance values match your design requirements. Confirm compliance with any specific environmental or safety standards required for your intended deployment before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capability combined with low switching losses. The TO-263 surface mount package facilitates integration into compact power supply designs. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance to ensure reliable operation within the 175°C maximum junction temperature limit.

Part Context

This part belongs to the Analog Power direct wide bandgap diode series, specifically engineered for high-efficiency power conversion systems. The device leverages silicon carbide material properties to outperform traditional silicon rectifiers in terms of speed and thermal stability. It serves as a critical component in modern power electronics demanding reduced energy loss and improved system reliability.