ADL8106ACEZ-R7

RF Amplifiers Overview

The ADL8106ACEZ-R7 is a GaAs pHEMT MMIC low noise amplifier operating from 18 GHz to 54 GHz. It provides a gain of 21.5 dB, a noise figure of 3.5 dB, and an output P1dB of 14.5 dBm. The OIP3 is 21.5 dBm. It requires a 3 V supply with 120 mA current consumption. The device is housed in a 24-lead LGA-CAV (5x5) package and operates between -40°C and +85°C.

RF Amplifiers Feature Summary

• Utilizes gallium arsenide pseudomorphic high electron mobility transistor technology for high-frequency performance.
• Provides high gain and low noise characteristics suitable for millimeter-wave applications.

RF Amplifiers Applications

• Point-to-point microwave radio links
• Satellite communication systems
• Military electronic warfare equipment

RF Amplifiers Procurement Notes

Verify the specific suffix R7 indicates reel packaging when ordering. Confirm the LGA-CAV-24 package dimensions against PCB footprint requirements. Ensure thermal management strategies align with the specified operating temperature range of -40°C to +85°C. Check moisture sensitivity levels for proper storage and handling procedures during assembly.

RF Amplifiers Selection Notes

Select this component for designs requiring wideband amplification across the K, Ka, and V bands. Consider the 3 V supply voltage compatibility with existing system power rails. Evaluate the 120 mA current draw against total power budget constraints. Compare the 21.5 dB gain against link budget requirements to ensure sufficient signal margin.

RF Amplifiers Part Context

This part belongs to the ADL8106 series of monolithic microwave integrated circuits. It represents a specialized RF solution designed for high-performance wireless infrastructure. The family focuses on delivering consistent gain and noise figures across broad frequency ranges using advanced GaAs processes.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.