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ADMV2101BRHZ-R7 is listed in the RF Misc ICS And Modules range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is INGAP HBT DIVIDE-BY-4 SMT, DC -. Review the specifications below when checking this part for your BOM.
The ADMV2101BRHZ-R7 is a divide-by-4 prescaler utilizing InGaP HBT technology. It operates from DC to 8 GHz, with specified performance data indicating a minimum frequency of 50 MHz and maximum of 4 GHz in certain configurations. The device requires a supply voltage between 2.7 V and 3.3 V, typically operating at 3 V. It draws 55 mA of current and delivers an output power of -2.8 dBm. Packaged in an SOIC-8 or MSOP-8 surface-mount format, it functions within a temperature range of -40°C to +85°C.
Verify component authenticity through authorized Analog Devices channels due to limited supply status. Confirm specific frequency range requirements against datasheet specifications, as operational limits vary by configuration. Ensure thermal management aligns with the -40°C to +85°C operating window. Check for alternative packaging options if SMD/SMT constraints exist. Validate power supply stability within the 2.7 V to 3.3 V range to maintain optimal performance.
Select this component for applications requiring precise divide-by-4 ratios at high frequencies. Consider the InGaP HBT technology for superior noise characteristics compared to standard CMOS alternatives. Evaluate the small form factor suitability for dense PCB layouts. Assess power consumption needs against the 55 mA draw. Verify interface compatibility with upstream RF sources operating within the specified bandwidth.
This prescaler belongs to Analog Devices' portfolio of high-performance radio frequency integrated circuits. It complements other frequency generation and division solutions by providing a robust, low-noise option for millimeter-wave applications. The device supports system designs needing reliable frequency synthesis without complex digital logic overhead.
No public confirmed substitute part numbers are available in official documentation.
It utilizes InGaP HBT (Indium Phosphide Gallium Arsenide Heterojunction Bipolar Transistor) technology.
The device implements a fixed divide-by-4 ratio.
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