ADPA1107ACPZN

RF Amplifiers Overview

The ADPA1107ACPZN is a Gallium Nitride (GaN) broadband power amplifier manufactured by Analog Devices Inc. It operates within a frequency range of 4.8 GHz to 6.0 GHz. The device delivers an output power of 45.0 dBm (35 W) at an input power of 27.0 dBm, with typical values measured between 5.4 GHz and 6.0 GHz. It features a small-signal gain of 30.5 dB in the 4.8 GHz to 5.4 GHz range and maintains a gain flatness of ±0.5 dB from 5.4 GHz to 6.0 GHz. The typical Power Added Efficiency (PAE) is 56.5% under specified conditions. The component requires a 28 V supply voltage with a quiescent current of 350 mA at 10% duty cycle. It is housed in a 40-lead, 6 mm × 6 mm Lead Frame Chip Scale Package (LFCSP).

RF Amplifiers Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high-power RF amplification.
• Provides high output power of 35 W across a 4.8 GHz to 6.0 GHz bandwidth.
• Ensures signal integrity with ±0.5 dB gain flatness in the upper frequency range.
• Achieves high energy efficiency with a typical PAE of 56.5%.

RF Amplifiers Applications

• Weather radar systems
• Marine radar applications
• Military radar platforms

RF Amplifiers Procurement Notes

Verify the specific suffix (e.g., -R7 for tape and reel or bare part number) against the official Analog Devices datasheet to ensure correct packaging and handling requirements. Confirm that the 28 V supply design matches the specified quiescent current and duty cycle constraints. Ensure ESD protection measures are implemented during assembly due to the LFCSP package type. Cross-reference the pinout diagram with the target PCB layout to prevent connection errors.

RF Amplifiers Selection Notes

Select this component for applications requiring high linearity and efficiency in the C-band spectrum. The 40-pin LFCSP package offers a compact footprint suitable for space-constrained radar modules. Consider the thermal management requirements associated with 35 W output power. Verify compatibility with existing drive stages capable of providing the necessary 27 dBm input power level for optimal performance metrics.

RF Amplifiers Part Context

The ADPA1107ACPZN belongs to Analog Devices' ADPA series of GaN power amplifiers designed for robust RF performance. It complements other wideband amplifiers in the portfolio by targeting specific high-power pulse applications. The device integrates advanced GaN HEMT technology to deliver superior power density compared to traditional silicon-based solutions.

RF Amplifiers Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative GaN PAs from Analog Devices such as the ADPA1112 for higher frequency ranges (8–16 GHz), noting significant differences in operating bands and performance characteristics.