ADPA1116ACGZN-R7

RF Amplifiers Overview

The ADPA1116ACGZN-R7 is a wideband GaN power amplifier IC operating from 300 MHz to 6 GHz. It features internal RF input and output matching with AC coupling. The device requires a 28 V drain bias voltage applied to integrated bias inductors, with gate current set via negative voltage. Typical performance at 0.5 GHz to 5 GHz includes 39.5 dBm saturated output power, 23.5 dB power gain, and 40% power-added efficiency at an input power of 16.0 dBm. Small-signal gain is typically 33.5 dB. It operates within a temperature range of -40°C to +85°C.

RF Amplifiers Feature Summary

• Wideband operation across 300 MHz to 6 GHz with internal impedance matching
• Gallium Nitride (GaN) process technology for high power density
• Integrated DC bias inductors simplifying circuit design
• AC-coupled RF input and output ports

RF Amplifiers Applications

• Radar systems
• Electronic warfare applications
• Military communication systems

RF Amplifiers Procurement Notes

Verify the specific suffix R7 indicates reel packaging when sourcing. Confirm that the 28V supply requirement matches your system's power architecture. Ensure thermal management solutions are adequate for the specified power dissipation levels during continuous operation. Validate that the LFCSP-32 package footprint aligns with your PCB layout constraints before finalizing procurement orders.

RF Amplifiers Selection Notes

Select this component for designs requiring broad frequency coverage without external matching networks. The integrated bias inductors reduce component count compared to discrete solutions. Consider the 28V supply requirement as it differs from standard low-voltage logic interfaces. Evaluate thermal performance needs given the high power output capabilities inherent to GaN technology in this form factor.

RF Amplifiers Part Context

This part belongs to Analog Devices' ADPA1116 series of GaN power amplifiers. It is designed for demanding RF applications where wide bandwidth and high linearity are critical. The device represents a monolithic integration of active devices and passive components on a single chip, offering superior performance consistency compared to hybrid assemblies.

RF Amplifiers Replacement Considerations

Direct substitutes include other Analog Devices GaN PAs in the LFCSP-32 package with similar frequency ranges. Verify pin compatibility and thermal pad requirements when considering cross-brand alternatives. Ensure replacement parts support the same 28V bias voltage specification.