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ADPA1116ACGZN is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is GAN WIDEBAND POWER AMPLIFIER ICS. Review the specifications below when checking this part for your BOM.
The ADPA1116ACGZN is a wideband GaN power amplifier IC operating from 300 MHz to 6 GHz. It delivers a saturated output power of 39.5 dBm with a typical power added efficiency of 40% and small-signal gain of 32.5 dB at 28 V drain bias. The device features internal RF matching, AC-coupled inputs/outputs, and integrated bias inductors. Packaged in a 32-lead LFCSP-CAV (5x5 mm) with exposed pad, it supports operation between -40°C and +85°C.
Verify the specific suffix (e.g., R7 for reel packaging) against your manufacturing requirements. Confirm that the LFCSP-CAV-EP-32 package footprint matches your PCB layout. Ensure thermal management solutions accommodate the specified power dissipation capabilities during high-power operation.
Select this component when a single-chip solution covers 300 MHz to 6 GHz. The integrated matching and bias inductors minimize design complexity compared to discrete GaN amplifiers. Verify that the 28 V supply voltage aligns with your system architecture and that the 39.5 dBm output power meets your link budget requirements.
This part belongs to Analog Devices' ADPA1116 series of GaN power amplifiers. It shares the same core die and functionality as the ADPA1116ACGZN-R7 variant, differing primarily in shipping configuration. The series is designed for high-efficiency, wideband performance in demanding RF environments.
The ADPA1116ACGZN-R7 is a direct functional equivalent with identical electrical specifications. No other cross-model replacements are officially documented for this specific part number.
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