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ADPA1122AEHZ-R7 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is 8-12 GHZ,20W,GAN RADAR PA. Review the specifications below when checking this part for your BOM.
The ADPA1122AEHZ-R7 is a single-stage, internally matched and AC-coupled GaN power amplifier designed for radar applications. It operates within the 8 GHz to 12 GHz frequency range, delivering a saturated output power of 20 W (43 dBm). The device achieves a typical Power Added Efficiency (PAE) exceeding 43% and provides approximately 20 dB of gain. It requires a 28 V supply voltage with a typical supply current of 200 mA. The component is housed in an 18-terminal ceramic leadless chip carrier package with a heat sink (LCC_HS), suitable for operation across a temperature range of -40°C to +85°C.
Verify the specific ordering suffix '-R7' to confirm reel packaging requirements. Ensure thermal management solutions are compatible with the LCC_HS package specifications. Confirm that the 28V supply rail meets the stability requirements outlined in the official datasheet. Check for moisture sensitivity levels and reflow soldering profiles prior to assembly.
Select this component when high output power and efficiency are critical in the 8-12 GHz band. The integrated power detector eliminates external sensing components. Consider the thermal resistance of the ceramic package for PCB layout. Verify that the required gain and linearity meet system specifications compared to alternative multi-stage amplifiers.
This part belongs to Analog Devices' portfolio of GaN power amplifiers targeting high-frequency radar and communication systems. It complements other wideband amplifiers like the ADPA1112, offering optimized performance in the X-band and Ku-band ranges. The series emphasizes robustness and integration for demanding defense and industrial environments.
Public confirmed substitute part numbers are not available in the provided documentation.
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