SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
ADPA1122AEHZ is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is 8-12 GHZ,20W,GAN RADAR PA. Review the specifications below when checking this part for your BOM.
The ADPA1122AEHZ is a gallium nitride (GaN) power amplifier designed for radar applications. It operates within an 8.2 GHz to 11.8 GHz frequency range, delivering 43 dBm (20 W) of output power with a power-added efficiency (PAE) exceeding 43%. The device features internal matching and AC coupling, along with an integrated temperature-compensated RF power detector. Packaged in an 18-lead CLCC (7x7 mm) format, it is optimized for pulsed operation.
Verify the specific suffix 'AEHZ' against official Analog Devices documentation to confirm package type and environmental rating. Ensure compatibility with 28 V supply requirements and thermal management solutions suitable for 20 W output. Confirm that the 18-lead CLCC footprint matches the target PCB layout constraints before finalizing procurement orders.
Select this component when high output power and efficiency are required in the X-band or Ku-band spectrum. The integrated power detector eliminates external sensing components, reducing board space. Consider the pulsed duty cycle limitations and thermal dissipation capabilities inherent to GaN technology in dense packaging environments.
This part belongs to the ADPA1122 series of GaN power amplifiers from Analog Devices. It is distinct from lower-power variants and broader bandwidth models like the ADPA1112. The AEHZ designation specifies the leaded ceramic chip carrier package variant intended for robust industrial and military-grade deployments.
No direct public substitute part numbers are confirmed for this specific model. Cross-reference with ADPA1112AEJZ only if wider bandwidth (1-22 GHz) and lower power (15 W) are acceptable trade-offs.
Explore related parts through RF and Wireless, all product categories, ChipApex homepage.