ADPA7007AEHZ-R7

RF Amplifiers Overview

The ADPA7007AEHZ-R7 is a GaAs pHEMT MMIC power amplifier designed for the 20 GHz to 44 GHz frequency range. It operates with a typical supply voltage of 5 V and draws a maximum current of 1.4 A. The device provides a gain of 20.5 dB and features a P1dB compression point of 31 dBm, delivering over 1 W of output power. Key electrical parameters include a noise figure of 6 dB, an OIP3 of 41 dBm, and input return loss values of 12 dB, 13 dB, and 15 dB across specific test bands. It utilizes a CLCC-HS-18 surface-mount package and supports an operating temperature range from -40°C to +85°C.

RF Amplifiers Feature Summary

• Utilizes GaAs pHEMT technology for high-performance RF amplification in millimeter-wave applications.
• Features 50 Ω matched input and output interfaces for seamless integration into standard RF systems.
• Delivers high output power exceeding 1 W with a P1dB of 31 dBm within the 20–44 GHz band.

RF Amplifiers Applications

• Point-to-point microwave radio links
• Satellite communication ground stations
• Military electronic warfare systems

RF Amplifiers Procurement Notes

Verify the complete part number including the suffix '-R7' to ensure correct reel packaging configuration. Confirm that the CLCC-HS-18 package type aligns with your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified power dissipation levels during operation.

RF Amplifiers Selection Notes

Select this component when high output power and wide bandwidth are required in the K-band and above. Consider the 1.4 A supply current requirement for power budget calculations. Evaluate the 6 dB noise figure against system link budget requirements if low-noise performance is critical for the application chain.

RF Amplifiers Part Context

This part belongs to Analog Devices' ADPA7007 series of monolithic microwave integrated circuits (MMICs). It is specifically engineered as a power amplifier for high-frequency wireless communications. The series is characterized by its use of GaAs pHEMT processes to achieve high linearity and efficiency in compact packages suitable for modern RF front-end designs.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official Analog Devices resources for potential cross-reference options or updated product line replacements.