ADR425BR

Overview

The ADR425BR is a second-generation XFET voltage reference from Analog Devices, providing a fixed 5.00 V output in an 8-lead SOIC package. It features B-grade initial accuracy of ±0.04% and a temperature coefficient of 3 ppm/°C over the −40°C to +125°C range. The device operates with a supply voltage between 7 V and 18 V, drawing a maximum quiescent current of 500 µA while delivering up to 10 mA of load current. Low noise performance is specified at 3.4 µV p-p (0.1 Hz to 10 Hz), ensuring high precision for sensitive applications.

Feature Summary

• Utilizes patented XFET technology to minimize nonlinearity and achieve superior thermal hysteresis compared to band gap references.
• Includes a dedicated trim terminal allowing output voltage adjustment within a ±0.5% range without compromising temperature stability.
• Offers long-term stability of 50 ppm per 1000 hours and low voltage noise density for high-resolution signal processing.

Applications

• Precision data acquisition systems
• High resolution converters
• Optical network control circuits

Procurement Notes

Verify the specific suffix 'BR' corresponds to the required B-grade electrical specifications and SOIC-8 packaging configuration. Confirm that the operating input voltage range meets the minimum headroom requirements relative to the 5 V output. Ensure environmental conditions align with the extended industrial temperature rating.

Selection Notes

Select this component when a fixed 5 V reference with high accuracy and low drift is required. The B-grade specification provides tighter tolerance than the A-grade alternative. Consider the XFET architecture benefits regarding noise and hysteresis if replacing older band gap or buried zener designs.

Part Context

This part belongs to the ADR42x series of ultraprecision voltage references. The series includes variants with different nominal outputs such as 2.048 V, 2.500 V, and 3.00 V. All members share the same XFET core technology and package options, differing primarily in factory-trimmed output voltage and associated accuracy grades.

Replacement Considerations

ADR425ARZ

FAQ

How does the XFET architecture differ from standard band gap references?

XFET technology uses junction field-effect transistors with an extra channel implant, resulting in lower intrinsic temperature coefficients and significantly reduced noise compared to traditional band gap structures.

Can the output voltage be adjusted externally?

Yes, the TRIM pin allows for output voltage adjustment over a ±0.5% range using external resistors, which helps correct system errors without affecting the temperature coefficient.